Transient analysis on surface heated piezoelectric semiconductor plate lying on rigid substrate

Abstract Based on the thermo-electro-elastic coupling theory, mathematical model for a surface heated piezoelectric semiconductor (PS) plate is developed in time domain. Applying direct and inverse Laplace transformations to established model, mechanical electrical responses are investigated. The comparison between analytical solution finite element method (FEM) conducted, which illustrates validity of derivation. calculated results show that maximum values fields appear at heating surface. Importantly, perturbation carriers tend concentrate zone near under given boundary conditions. It can also be observed induced elastic wave leads jumps electric potential carrier density wavefront. When thermal relaxation introduced, all field quantities become smaller because lagging effect. Meanwhile, it found describe smooth variation jump position. Besides, with P-N junction, effect interface position response studied. effects initial properties discussed detail. conclusions this article guidance design PS devices serving environment.